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| 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3799 Switching Regulator Applications Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 1.0 (typ.) : |Yfs| = 6.0 S (typ.) Unit: mm Low leakage current : IDSS = 100A (max) (VDS = 720 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 8 24 50 1080 8 5 150 -55~150 Unit V V V A A W mJ A mJ C C 1. Gate 2. Drain 3. Source Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA -- SC-67 2-10U1B Weight: 1.7 g (typ.) 2 Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit C / W C / W 1 Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 30.9 mH, RG = 25, IAR = 8 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2005-01-24 2SK3799 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ID = 4 A RL = 100 VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VGS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min -- 30 -- 450 2.0 -- 3.5 -- -- -- -- Output -- 65 -- ns -- 20 -- Typ. -- -- -- -- -- 1.0 6.0 2200 45 190 25 Max 10 -- 100 -- 4.0 1.3 -- -- -- -- -- pF Unit A V A V V S VGS Turn-on time Switching time Fall time tf ton 10 V 0V 4.7 VDD 400 V Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd Duty 1%, tw = 10 s -- -- 120 60 34 26 -- -- -- -- nC VDD 400 V, VGS = 10 V, ID = 8 A -- -- Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V dlDR / dt = 100 A / S Test Condition -- -- Min -- -- -- -- -- Typ. -- -- -- 1700 23 Max 8 24 -1.7 -- -- Unit A A V ns C Marking K3799 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-24 2SK3799 ID - VDS 10 COMMON SOURCE Tc = 25C PULSE TEST 10 6 5.5 6 5.25 20 COMMON SOURCE Tc = 25C PULSE TEST ID - VDS 15 (A) (A) 8 16 DRAIN CURRENT ID DRAIN CURRENT ID 10 12 15 6 4 5 8 5.5 4.75 2 VGS = 4.5 V 4 5 VGS = 4.5 V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS 20 COMMON SOURCE VDS = 20 V PULSE TEST 20 VDS - VGS COMMON SOURCE Tc = 25C PULSE TEST DRAIN CURRENT ID (A) 16 VDS DRAIN-SOURCE VOLTAGE 25 (V) 16 12 12 ID = 8 A 8 8 100 4 Tc = -55C 4 4 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID 100 RDS (ON) - ID 10 COMMON SOURCE FORWARD TRANSFER ADMITTANCE Yfs (S) DRAIN-SOURCE ON RESISTANCE RDS (ON) () COMMON SOURCE VDS = 20 V PULSE TEST Tc = 25C PULSE TEST VGS = 10 V 1 10 Tc = -55C 25 100 1 0.1 1 10 100 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2005-01-24 2SK3799 RDS (ON) - Tc 5 IDR - VDS 100 DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) () 4 COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25C PULSE TEST 10 3 ID = 8 A 2 4 2 1 10 5 3 1 VGS = 0 V -0.8 -1.2 -1.6 1 0 -80 -40 0 40 80 120 160 0.1 0 -0.4 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) C - VDS 10000 Ciss 5 Vth - Tc (V) Vth GATE THRESHOLD VOLTAGE C (pF) 4 1000 CAPACITANCE Coss 100 Crss 10 3 2 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 100 1 1 0.1 0 -80 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc 80 500 DYNAMIC INPUT/OUTPUT CHARACTERISTICS COMMON SOURCE ID = 8 A Tc = 25C PULSE TEST 20 (W) (V) VDS 60 400 16 DRAIN POWER DISSIPATION DRAIN-SOURCE VOLTAGE 300 200 200 VGS 100 100 VDS = 400 V 12 40 8 20 4 0 0 40 80 120 160 0 0 20 40 60 80 0 100 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2005-01-24 GATE-SOURCE VOLTAGE VGS PD VDS (V) 2SK3799 rth - tw 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 2.5C/W 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSE) * 100 s * ID max (CONTINUOUS) 1 ms * 2000 EAS - Tch (mJ) AVALANCHE ENERGY EAS 1600 DRAIN CURRENT ID (A) 10 1200 1 DC OPERATION Tc = 25C 0.1 * SINGLE NONPETITIVE PULSE Tc = 25C VDSS max 1000 10000 800 400 Curves must be derated linearly 0.01 1 with increase in temperature. 10 100 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (C) DRAIN-SOURCE VOLTAGE VDS (V) 15 V -15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 VDD = 90 V, L = 30.9 mH WAVE FORM AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2005-01-24 2SK3799 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-01-24 |
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